Characterization and Modeling of Native MOSFETs Down to 4.2 K

The extremely low threshold voltage (Vth) of native MOSFETs (Vth~0V@300K) is conducive to the design cryogenic circuits. Previous research on mainly focused standard (SVT) and (LVT) MOSFETs. In this paper, we characterize within temperature range from 300K 4.2K. Vth increases up ~0.25V (W/L=10um/10um) improved subthreshold swing (SS)~14.30mV/[email protected]. off-state current (Ioff) gate-induced drain leakage (GIDL) effect are ameliorated greatly. step-up caused by substrate charge transconductance peak energy quantization in different sub-bands also discussed. Based EKV model, modified mobility calculation equations proposed a compact model large size suitable for mobility-related parameters extracted via machine learning approach dependences scattering mechanisms analyzed. This work beneficial both modeling CMOS circuits quantum chips.